型号:

IRF6648TR1PBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 60V 86A DIRECTFET
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRF6648TR1PBF PDF
产品目录绘图 IR Hexfet Circuit
IR Hexfet Circuit
DirectFET
标准包装 1
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 60V
电流 - 连续漏极(Id) @ 25° C 86A
开态Rds(最大)@ Id, Vgs @ 25° C 7 毫欧 @ 17A,10V
Id 时的 Vgs(th)(最大) 4.9V @ 150µA
闸电荷(Qg) @ Vgs 50nC @ 10V
输入电容 (Ciss) @ Vds 2120pF @ 25V
功率 - 最大 2.8W
安装类型 表面贴装
封装/外壳 DirectFET? 等容 MN
供应商设备封装 DIRECTFET? MN
包装 剪切带 (CT)
产品目录页面 1525 (CN2011-ZH PDF)
其它名称 IRF6648TR1PBFCT
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